南京第三代半导体技术创新中心有限公司

国家第三代半导体技术创新中心（南京）（以下简称“南京中心”）是国家级创新平台。

南京中心坐落于南京市江宁区，充分发挥南京丰富的基础研究、应用基础研究和技术创新资源优势，主攻电力电子、光电子、射频电子等应用领域。南京中心以关键技术研发为核心使命，产学研协同推动科技成果转移转化与产业化，为区域和产业发展提供源头技术供给，为科技型中小企业孵化、培育和发展提供创新服务，为支撑产业向中高端迈进、实现高质量发展发挥战略引领作用。

南京中心现拥有国内顶尖的第三代半导体器件研发技术团队，核心技术全国领先，国际先进。该团队由中国电科首席专家柏松领衔，拥有博士以上学历13人，高级以上职称12人。

Introduction

National Center of Technology Innovation for Wide BandGap Semiconductors (Nanjing) is a state-level technology innovation center， located in Jiangning District, Nanjing，Nanjing Center was set up to develope power electronics, optoelectronics, RF electronics and other electronic device technologies，giving its full play to the local advantages in fundamental researches, applied researches and technological innovation ability. Nanjing Center will cooperate together with industries, universities and research institutes to promote the technological progress and the achievement transformation of science and technology. Nanjing Center will continuously commit itself to providing technical sources for regional and industrial development, offering services for cultivating and developing small-and medium-sized enterprises, leading industries to middle and high-end and achieve high-quality development.

Nanjing Center has established an R&D team which is among the best in China for wide bandgap semiconductor devices. The research team led by Bai Song, chief expert of CETC, consists of over ten doctors, and a number of senior engineers.